The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 02, 1998
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A process for creating a DRAM capacitor structure, featuring a doped polysilicon layer, overlying a crown shaped storage node electrode, has been developed. The process features the use of an HSG silicon layer, on a doped amorphous silicon, storage node shape, with the HSG silicon layer supplying increased surface area, and thus increased capacitance, for the DRAM capacitor. A doped polysilicon layer, selectively deposited on the underlying HSG silicon layer, supplies additional dopant to the HSG silicon layer, residing on the doped amorphous silicon, storage node shape, thus minimizing a capacitance depletion phenomena, that can be present with lightly doped storage node structures.