logo

For the Inventor, By the Inventor

Nagasaki, Japan

Sumco Techxiv Corporation


USPTO Granted Patents = 87

% Expired Patents = 4.6


Forward Citations = 262

Loading Chart...
Loading Chart...

131 inventors (with patents filed for the assignee):

goldMedal Toshimichi Kubota (21 out of 25 patents)

silverMedal Yasuhito Narushima (20 out of 37 patents)

bronzeMedal Fukuo Ogawa (18 out of 25 patents)

4.  Shinichi Kawazoe (17 out of 19 patents)

5.  Kazuaki Kozasa (8 out of 8 patents)

6.  Kazuhiro Narahara (6 out of 13 patents)

7.  Tomonori Kawasaki (6 out of 6 patents)

8.  Shinya Sadohara (5 out of 6 patents)

9.  Shigeo Morimoto (4 out of 27 patents)

10.  Tomohiro Fukuda (4 out of 4 patents)

11.  Daisuke Ebi (4 out of 7 patents)

12.  Yutaka Shiraishi (4 out of 15 patents)

13.  Shiro Yoshino (4 out of 8 patents)

14.  Masayuki Uto (3 out of 8 patents)

15.  Hiroshi Inagaki (3 out of 28 patents)


Core Competencies:
Silicon Wafer
Epitaxial Growth
Single Crystal
Polishing Device
Doping Apparatus
Semiconductor Processing
Crystal Pulling
Etching Method
Heat Treatment
Inspection Device
Grinding Apparatus
Manufacturing Method

87 patents:

1. 10553420 - Method and device for polishing semiconductor wafer (2020-02-04),
2. 10294583 - Producing method and apparatus of silicon single crystal, and silicon single crystal ingot (2019-05-21),
3. 10233562 - Method for producing single crystal, and method for producing silicon wafer (2019-03-19),
4. 10227710 - Manufacturing method of silicon monocrystal (2019-03-12),
5. 9975217 - Scattering plate, grinding wheel, and grinding device (2018-05-22),
6. 9876078 - Method for slicing semiconductor single crystal ingot (2018-01-23),
7. 9758899 - Manufacturing method of silicon single crystal having low-resistivity electrical characteristics (2017-09-12),
8. 9758871 - Method and apparatus for manufacturing epitaxial silicon wafer (2017-09-12),
9. 9755022 - Epitaxial silicon wafer having reduced stacking faults (2017-09-05),
10. 9425264 - Method for growing an epitaxial film on a phosphorous-doped silicon wafer (2016-08-23),
11. 9305850 - Etching method and etching apparatus of semiconductor wafer (2016-04-05),
12. 9293318 - Semiconductor wafer manufacturing method (2016-03-22),
13. 9212431 - Silicon single crystal pulling device and graphite member used therein (2015-12-15),
14. 9181631 - Silicon crystalline material and method for manufacturing the same (2015-11-10),
15. 9080251 - Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt (2015-07-14),
Sumco Techxiv Corporation, based in Nagasaki, Japan, specializes in the manufacturing of high-quality silicon wafers essential for semiconductor applications. The company focuses on advanced technologies such as epitaxial growth, single crystal production, and precision polishing devices. With expertise in doping apparatus and semiconductor processing, Sumco Techxiv plays a critical role in the supply chain for electronic components, contributing to innovations in various high-tech industries, including consumer electronics and automotive sectors.
Profile summary based on public USPTO records.

logo

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

Sumco Techxiv Corporation
87 Patents

#1 in Nagasaki

#1,229 in Japan

#8,770 in the World

Nagasaki, JP
Nagasaki, Japan

Sumco Techxiv Corporation

Forward Citations = 262

131 inventors:

goldMedal Toshimichi Kubota (21 out of 25 patents)

silverMedal Yasuhito Narushima (20 out of 37 patents)

bronzeMedal Fukuo Ogawa (18 out of 25 patents)

4.  Shinichi Kawazoe (17 out of 19 patents)

5.  Kazuaki Kozasa (8 out of 8 patents)

Please report any incorrect information to [email protected]
Loading…