The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Apr. 15, 2014
Applicant:

Sumco Techxiv Corporation, Nagasaki, JP;

Inventors:

Yasuhito Narushima, Tokyo, JP;

Toshimichi Kubota, Tokyo, JP;

Fukuo Ogawa, Tokyo, JP;

Masayuki Uto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 15/20 (2006.01); C30B 15/14 (2006.01); C30B 29/06 (2006.01); B28D 5/00 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); B28D 5/0011 (2013.01); C30B 15/14 (2013.01); C30B 15/20 (2013.01); C30B 15/206 (2013.01); C30B 25/10 (2013.01); C30B 25/186 (2013.01); C30B 29/06 (2013.01); C30B 33/00 (2013.01);
Abstract

A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 mΩ·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cmor less.


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