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For the Inventor, By the Inventor

Tokyo, Japan

Yasuhito Narushima

This inventor holds 37 USPTO granted patents and 6 published patent applications and 4 EPO patents, primarily in Silicon Crystal Production. Top assignees: Sumco Techxiv Corporation, Sumco Corporation. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuhito Narushima. Retrieved from https://idiyas.com/inventor/yasuhito-narushima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 42(Granted Patents)


Location History:

  • Hiratsuka, JP (2015)
  • Nagasaki, JP (2013 - 2022)
  • Tokyo, JP (2014 - 2023)
  • Omura, JP (2011 - 2024)

Company Filing History:

goldMedal20 out of 87 
 
Sumco Techxiv Corporation
 patents
silverMedal18 out of 624 
 
Sumco Corporation
 patents
where one patent can have more than one assignee

Years Active: 2011-2026

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Areas of Expertise:
Silicon Wafer
Monocrystalline Silicon
Single Crystal
N-Type Silicon
Doping Apparatus
Epitaxial Wafer
Crystal Pulling Device
Czochralski Process
Low Resistivity
Silicon Ingot
Heat Shield
37 patents (USPTO):Explore Patents
1. 12662748 - Silicon single crystal growing method (2026-06-23),
2. 12527054 - Silicon wafer and epitaxial silicon wafer (2026-01-13),
3. 12297560 - Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter (2025-05-13),
4. 12252803 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2025-03-18),
5. 12031231 - Low resistivity wafer (2024-07-09),
6. 11702760 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2023-07-18),
7. 11598023 - Low resistivity wafer and method of manufacturing thereof (2023-03-07),
8. 11377755 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2022-07-05),
9. 11242617 - Method for producing silicon single crystal (2022-02-08),
10. 11047065 - Method for producing silicon single crystal, heat shield, and single crystal pulling device (2021-06-29),
11. 10982350 - Silicon monocrystal production method (2021-04-20),
12. 10916425 - Method for manufacturing silicon single crystal, flow straightening member, and single crystal pulling device (2021-02-09),
13. 10895018 - Method for producing silicon single crystal (2021-01-19),
14. 10329686 - Method for producing single crystal (2019-06-25),
15. 10294583 - Producing method and apparatus of silicon single crystal, and silicon single crystal ingot (2019-05-21),

Title: The Innovative Work of Tokyo-Based Inventor Yasuhito Narushima

Introduction: Yasuhito Narushima is a prolific inventor based in Tokyo, Japan, with an impressive portfolio of 33 patents to his name. Known for his groundbreaking work in semiconductor technology, Narushima has revolutionized the industry with his cutting-edge inventions.

Latest Patents: Among his latest patents is a groundbreaking low resistivity wafer, a semiconductor wafer with unique properties such as a resistivity of 0.7 mΩ-cm or less and a striation height of 6 mm or more. This innovation involves a method of producing semiconductor wafers with specific resistivity levels and striation heights using a silicon melt and a magnetic field of 3000 G or more.

Additionally, Narushima's contributions include the n-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer. These inventions focus on growing monocrystalline silicon with specific electrical resistivity ranges using advanced techniques.

Career Highlights: Narushima has made significant contributions to the field while working at esteemed companies such as Sumco Techxiv Corporation and Sumco Corporation. His expertise and innovative approach have played a pivotal role in advancing semiconductor technologies and pushing the boundaries of what is possible in the industry.

Collaborations: Throughout his career, Narushima has collaborated with talented individuals such as Toshimichi Kubota and Fukuo Ogawa. These partnerships have resulted in groundbreaking inventions and have further solidified Narushima's reputation as a pioneer in semiconductor innovation.

Conclusion: Yasuhito Narushima's relentless dedication to innovation and his remarkable contributions to semiconductor technology have cemented his status as a leading inventor in the field. His groundbreaking patents and collaborative efforts underscore his commitment to pushing the boundaries of technological advancement and shaping the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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