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For the Inventor, By the Inventor

Tokyo, Japan

Yasuhito Narushima

USPTO Granted Patents = 35 

 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 41(Granted Patents)


Location History:

  • Hiratsuka, JP (2015)
  • Nagasaki, JP (2013 - 2022)
  • Tokyo, JP (2014 - 2023)
  • Omura, JP (2011 - 2024)

Company Filing History:

goldMedal20 out of 87 
 
Sumco Techxiv Corporation
 patents
silverMedal16 out of 602 
 
Sumco Corporation
 patents
where one patent can have more than one assignee

Years Active: 2011-2025

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35 patents (USPTO):Explore Patents
1. 12297560 - Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter (2025-05-13),
2. 12252803 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2025-03-18),
3. 12031231 - Low resistivity wafer (2024-07-09),
4. 11702760 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2023-07-18),
5. 11598023 - Low resistivity wafer and method of manufacturing thereof (2023-03-07),
6. 11377755 - N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer (2022-07-05),
7. 11242617 - Method for producing silicon single crystal (2022-02-08),
8. 11047065 - Method for producing silicon single crystal, heat shield, and single crystal pulling device (2021-06-29),
9. 10982350 - Silicon monocrystal production method (2021-04-20),
10. 10916425 - Method for manufacturing silicon single crystal, flow straightening member, and single crystal pulling device (2021-02-09),
11. 10895018 - Method for producing silicon single crystal (2021-01-19),
12. 10329686 - Method for producing single crystal (2019-06-25),
13. 10294583 - Producing method and apparatus of silicon single crystal, and silicon single crystal ingot (2019-05-21),
14. 10233564 - Manufacturing method of monocrystalline silicon and monocrystalline silicon (2019-03-19),
15. 10233562 - Method for producing single crystal, and method for producing silicon wafer (2019-03-19),

Title: The Innovative Work of Tokyo-Based Inventor Yasuhito Narushima

Introduction: Yasuhito Narushima is a prolific inventor based in Tokyo, Japan, with an impressive portfolio of 33 patents to his name. Known for his groundbreaking work in semiconductor technology, Narushima has revolutionized the industry with his cutting-edge inventions.

Latest Patents: Among his latest patents is a groundbreaking low resistivity wafer, a semiconductor wafer with unique properties such as a resistivity of 0.7 mΩ-cm or less and a striation height of 6 mm or more. This innovation involves a method of producing semiconductor wafers with specific resistivity levels and striation heights using a silicon melt and a magnetic field of 3000 G or more.

Additionally, Narushima's contributions include the n-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer. These inventions focus on growing monocrystalline silicon with specific electrical resistivity ranges using advanced techniques.

Career Highlights: Narushima has made significant contributions to the field while working at esteemed companies such as Sumco Techxiv Corporation and Sumco Corporation. His expertise and innovative approach have played a pivotal role in advancing semiconductor technologies and pushing the boundaries of what is possible in the industry.

Collaborations: Throughout his career, Narushima has collaborated with talented individuals such as Toshimichi Kubota and Fukuo Ogawa. These partnerships have resulted in groundbreaking inventions and have further solidified Narushima's reputation as a pioneer in semiconductor innovation.

Conclusion: Yasuhito Narushima's relentless dedication to innovation and his remarkable contributions to semiconductor technology have cemented his status as a leading inventor in the field. His groundbreaking patents and collaborative efforts underscore his commitment to pushing the boundaries of technological advancement and shaping the future of the industry.

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