The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Oct. 12, 2017
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Yasuhito Narushima, Tokyo, JP;
Masayuki Uto, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 15/20 (2006.01); C30B 15/14 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/203 (2013.01); C30B 15/14 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01);
Abstract
A method of producing a monocrystalline silicon uses a monocrystal pull-up apparatus including a crucible, a crucible driver, a pull-up portion, a heat shield having a circular hollow cylindrical lower end portion, and a chamber. The heat shield satisfies a formula (1) below in growing the monocrystalline silicon,≤1.27×  (1) where C represents a radius (mm) of a straight body of the monocrystalline silicon, and R represents an inner radius (mm) at the lower end portion of the heat shield.