The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
May. 25, 2023
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Koichi Maegawa, Tokyo, JP;
Yasuhito Narushima, Tokyo, JP;
Yasufumi Kawakami, Tokyo, JP;
Fukuo Ogawa, Tokyo, JP;
Ayumi Kihara, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 35/002 (2013.01); C30B 35/007 (2013.01); H01L 21/02002 (2013.01);
Abstract
A method for producing an n-type monocrystalline silicon that includes pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon. The monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 mΩcm to 2.0 mΩcm, and is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the monocrystalline silicon.