The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Mar. 29, 2018
Sumco Corporation, Tokyo, JP;
Koichi Maegawa, Nagasaki, JP;
Yasuhito Narushima, Nagasaki, JP;
Yasufumi Kawakami, Nagasaki, JP;
Fukuo Ogawa, Nagasaki, JP;
Yuuji Tsutsumi, Nagasaki, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 mΩcm or more and 1.05 mΩcm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 mΩm or more and less than 0.6 mΩcm.