The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Nov. 14, 2017
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Fukuo Ogawa, Tokyo, JP;
Yasuhito Narushima, Tokyo, JP;
Koichi Maegawa, Tokyo, JP;
Yasufumi Kawakami, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02636 (2013.01); C30B 29/06 (2013.01); H01L 21/02381 (2013.01); H01L 21/02513 (2013.01); H01L 21/02598 (2013.01);
Abstract
A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.