The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Aug. 15, 2012
Applicants:

Kazuaki Kozasa, Nagasaki, JP;

Tomonori Kawasaki, Nagasaki, JP;

Inventors:

Kazuaki Kozasa, Nagasaki, JP;

Tomonori Kawasaki, Nagasaki, JP;

Assignee:

SUMCO TECHXIV CORPORATION, Omura-Shi, Nagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/76 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/31116 (2013.01); H01L 21/76243 (2013.01); H01L 21/76256 (2013.01); H01L 22/26 (2013.01);
Abstract

A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process.


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