The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 10, 2015
Applicants:
Sumco Corporation, Tokyo, JP;
Sumco Techxiv Corporation, Nagasaki, JP;
Inventors:
Tadashi Kawashima, Nagasaki, JP;
Naoya Nonaka, Nagasaki, JP;
Masayuki Shinagawa, Nagasaki, JP;
Gou Uesono, Nagasaki, JP;
Assignees:
SUMCO TECHXIV CORPORATION, Nagasaki, JP;
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); H01L 29/167 (2006.01); H01L 21/322 (2006.01); H01L 29/02 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02658 (2013.01); H01L 21/3221 (2013.01); H01L 29/02 (2013.01); H01L 29/0603 (2013.01);
Abstract
An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.