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Dresden, Germany

Ferroelectric Memory Gmbh

USPTO Granted Patents = 52

EPO Patents = 1

Forward Citations = 280

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18 inventors (with patents filed for the assignee):

Johannes Ocker (18 out of 18 patents)

Marko Noack (13 out of 13 patents)

Stefan Müller (9 out of 13 patents)

4. Stefano Sivero (6 out of 7 patents)

5. Menno Mennenga (5 out of 15 patents)

6. Rashid Iqbal (5 out of 5 patents)

7. Rolf Jähne (4 out of 4 patents)

8. Stefan Ferdinand Müller (4 out of 4 patents)

9. Tony Schenk (3 out of 3 patents)

10. Patrick Polakowski (2 out of 11 patents)

11. Fabio Tassan Caser (2 out of 2 patents)

12. Georgi Kuzmanov (2 out of 2 patents)

13. Alessandro Palludo (2 out of 2 patents)

14. Corrado Villa (1 out of 79 patents)

15. Haidi Zhou (1 out of 1 patent)

Core Competencies:

Ferroelectric Memory

Memory Cell

Capacitive Memory Structure

Voltage Supply Circuit

Sensing Capacitor

Low-Voltage Sense Amplifier

Ternary Memory Cell

Startup Circuit

Memory Device

Multi-Stack Memory Structure

Threshold Switch Structure

Multiply Operation Circuit

52 patents: Sort by Forward Citations

1. 12477745 - Memory cell including spontaneously polarizable capacitor structure (2025-11-18),

2. 12464781 - Memory cell, memory cell arrangement, and methods thereof (2025-11-04),

3. 12462861 - Devices, methods, and systems for calibrating a sensing capacitor used in a sensing circuit for reading memory cells (2025-11-04),

4. 12431178 - Low-voltage sense amplifier for reading a state-programmable memory element (2025-09-30),

5. 12360741 - Multiply operation circuit, multiply and accumulate circuit, and methods thereof (2025-07-15),

6. 12334128 - Ferroelectric memory circuit and reading method thereof (2025-06-17),

7. 12283300 - Devices, methods, and systems for a multilevel memory cell (2025-04-21),

8. 12254914 - Memory cell with access device and memory capacitor structures (2025-03-18),

9. 12225732 - Multi-stack ferroelectric memory structure (2025-02-11),

10. 12190932 - Memory device, memory controller, and methods thereof (2025-01-07),

11. 12183381 - Self-adjusting reference current for a memory (2024-12-31),

12. 12075625 - Memory cell, capacitive memory structure, and methods thereof (2024-08-27),

13. 12032398 - Regulator circuit and methods thereof (2024-07-09),

14. 11996131 - Preconditioning operation for a memory cell with a spontaneously-polarizable memory element (2024-05-28),

15. 11950430 - Memory cell, capacitive memory structure, and methods thereof (2024-04-02),

FERROELECTRIC MEMORY GMBH specializes in the development and manufacturing of innovative ferroelectric memory solutions for various industries. Leveraging their expertise in ferroelectric materials, they aim to provide advanced memory technology with high-speed, high-density, and low-power consumption. With a strong focus on research and development, FERROELECTRIC MEMORY GMBH constantly strives to push the boundaries of memory technology and deliver cutting-edge solutions to their customers.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

52 Patents

#8 in Dresden

#1,049 in Germany

#13,161 in the World

Dresden, Germany

Ferroelectric Memory Gmbh

Forward Citations = 280

18 inventors:

Johannes Ocker (18 out of 18 patents)

Marko Noack (13 out of 13 patents)

Stefan Müller (9 out of 13 patents)

4. Stefano Sivero (6 out of 7 patents)

5. Menno Mennenga (5 out of 15 patents)

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