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For the Inventor, By the Inventor

Dresden, Germany

Ferroelectric Memory Gmbh


USPTO Granted Patents = 58

% Expired Patents = 1.7


Forward Citations = 365

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18 inventors (with patents filed for the assignee):

goldMedal Johannes Ocker (19 out of 19 patents)

silverMedal Marko Noack (13 out of 13 patents)

bronzeMedal Stefan Müller (9 out of 13 patents)

4.  Stefano Sivero (9 out of 10 patents)

5.  Menno Mennenga (5 out of 15 patents)

6.  Rashid Iqbal (5 out of 5 patents)

7.  Stefan Ferdinand Müller (5 out of 5 patents)

8.  Rolf Jähne (4 out of 4 patents)

9.  Tony Schenk (3 out of 3 patents)

10.  Alessandro Palludo (3 out of 3 patents)

11.  Patrick Polakowski (2 out of 11 patents)

12.  Corrado Villa (2 out of 81 patents)

13.  Fabio Tassan Caser (2 out of 2 patents)

14.  Georgi Kuzmanov (2 out of 2 patents)

15.  Haidi Zhou (1 out of 1 patent)


Core Competencies:
Ferroelectric Memory
Memory Cell
Capacitive Memory Structure
Voltage Supply Circuit
Sensing Capacitor
Low-Voltage Sense Amplifier
Ternary Memory Cell
Startup Circuit
Memory Device
Multi-Stack Memory Structure
Threshold Switch Structure
Multiply Operation Circuit

58 patents:

1. 12718861 - Memory cell arrangement and method of reading a capacitive memory cell (2026-08-25),
2. 12690197 - Memory cell, memory device, and methods thereof (2026-07-21),
3. 12660200 - Memory cells with lever electrodes and arrangements thereof (2026-06-16),
4. 12592268 - Devices, methods, and systems for calibrating a read voltage used for reading memory cells (2026-03-31),
5. 12562723 - Programmable delays and methods thereof (2026-02-24),
6. 12518813 - Sense counter-pulse for reading state-programmable memory cells (2026-01-06),
7. 12477745 - Memory cell including spontaneously polarizable capacitor structure (2025-11-18),
8. 12464781 - Memory cell, memory cell arrangement, and methods thereof (2025-11-04),
9. 12462861 - Devices, methods, and systems for calibrating a sensing capacitor used in a sensing circuit for reading memory cells (2025-11-04),
10. 12431178 - Low-voltage sense amplifier for reading a state-programmable memory element (2025-09-30),
11. 12360741 - Multiply operation circuit, multiply and accumulate circuit, and methods thereof (2025-07-15),
12. 12334128 - Ferroelectric memory circuit and reading method thereof (2025-06-17),
13. 12283300 - Devices, methods, and systems for a multilevel memory cell (2025-04-21),
14. 12254914 - Memory cell with access device and memory capacitor structures (2025-03-18),
15. 12225732 - Multi-stack ferroelectric memory structure (2025-02-11),
FERROELECTRIC MEMORY GMBH specializes in the development and manufacturing of innovative ferroelectric memory solutions for various industries. Leveraging their expertise in ferroelectric materials, they aim to provide advanced memory technology with high-speed, high-density, and low-power consumption. With a strong focus on research and development, FERROELECTRIC MEMORY GMBH constantly strives to push the boundaries of memory technology and deliver cutting-edge solutions to their customers.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Sep 15 2026

Ferroelectric Memory Gmbh
58 Patents

#9 in Dresden

#940 in Germany

#12,355 in the World

Dresden, DE
Dresden, Germany

Ferroelectric Memory Gmbh

Forward Citations = 365

18 inventors:

goldMedal Johannes Ocker (19 out of 19 patents)

silverMedal Marko Noack (13 out of 13 patents)

bronzeMedal Stefan Müller (9 out of 13 patents)

4.  Stefano Sivero (9 out of 10 patents)

5.  Menno Mennenga (5 out of 15 patents)

Please report any incorrect information to [email protected]
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