The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Dec. 09, 2021
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventor:

Stefan Ferdinand Müller, Radebeul, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

Various aspects relate to a memory cell, the memory cell including: a field-effect transistor structure; and a capacitive memory structure; wherein the field-effect transistor structure and the capacitive memory structure are configured to form a capacitive voltage divider; wherein the capacitive memory structure includes: a first electrode layer, a second electrode layer, and a memory element structured to have at least a first region extending from the first electrode layer to the second electrode layer and a second region extending from the first electrode layer to the second electrode layer, wherein the first region consists of a first material, wherein the second region consists of a second material, and wherein the first material is different from the second material.


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