The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Dec. 01, 2022
Ferroelectric Memory Gmbh, Dresden, DE;
Stefano Sivero, Comun Nuovo, IT;
FERROELECTRIC MEMORY GMBH, Dresden, DE;
Abstract
Disclosed herein are devices, methods, and systems for reading/writing memory cells of a memory, where the memory cells includes a memory element that is writable to at least three different remanent polarization states. A sensing circuit determines, in a read operation, a stored state of the memory element from among the at least three different remanent polarization states based on a sensed change in a remanent polarization of the memory element caused by an applied read voltage. A biasing circuit applies, in a write operation, apply a bias voltage level across the memory element to (re)write the memory element to the stored state.