The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Dec. 13, 2021
Applicant:
Ferroelectric Memory Gmbh, Dresden, DE;
Inventor:
Stefan Ferdinand Müller, Radebeul, DE;
Assignee:
Ferroelectric Memory GmbH, Dresden, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 53/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 53/00 (2023.02); H10D 1/692 (2025.01);
Abstract
Various aspects relate to a memory cell including: a thermally insulating layer disposed over one or more metallization layers of a metallization; an embedding structure disposed over the thermally insulating layer; and a spontaneously polarizable capacitor structure disposed at least partially within the embedding structure, wherein the spontaneously polarizable capacitor structure includes a spontaneously polarizable memory element; wherein the thermally insulating layer is configured as a heat barrier to reduce a heat transfer through the embedding structure into the one or more metallization layers.