The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jul. 14, 2023
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventors:

Stefan Ferdinand Müller, Radebeul, DE;

Tony Schenk, Dresden, DE;

Alireza Kashir, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element disposed between the first electrode and the second electrode. The memory element includes a spontaneously polarizable material. The first electrode, the second electrode, and the memory element forming a memory capacitor. The first electrode and/or the second electrode includes: an electrically conductive electrode layer, and a functional layer comprising a semi-conductive material, wherein the functional layer is in direct physical contact with the memory element.


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Quick Actions:

Müller, Stefan. (2026). Memory cell and method for changing properties of an electrode (U.S. Patent No. 12772456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772456

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