The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Oct. 18, 2023
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventor:

Stefano Sivero, Comun Nuovo, IT;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01);
Abstract

Disclosed herein are devices, methods, and systems for reading a programmed state of a memory element. The method includes setting a bit line to which the memory element is connected to a first voltage and developing to the bit line a compensation voltage different from the first voltage. The method also includes developing a modified sensing voltage to the bit line defined by the compensation voltage and a sensing voltage developed from the memory element and determining the programmed state based on the modified sensing voltage. A complementary memory element may be used to develop the compensation voltage by discharging a complementary plate line, to which the second memory element is connected, to charge a complementary bit line to which the second memory element is connected and by connecting the bit line to the complementary bit line to develop the compensation voltage to the bit line.


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