The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Dec. 18, 2024
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventors:

Corrado Villa, Sovico, IT;

Alessandro Palludo, Milan, IT;

Luigi Paone, Pioltello, IT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01);
Abstract

Disclosed herein is a cell operation circuit for sensing a programmed state of a memory element comprising: a sensing circuitry comprising a sensing node, a first input terminal to receive a first operation voltage and a second input terminal to receive a second operation voltage less than the first operation voltage; a first switch configured to apply a pre-charge voltage less than the second operation voltage to the sensing node; wherein the sensing circuitry is configured to read from the memory element based on a sensing voltage, which is developed at the sensing node.


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Villa, Corrado. (2026). Cell operation circuit and memory device (U.S. Patent No. 12770668). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12770668

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