The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jan. 08, 2021
Applicant:
Ferroelectric Memory Gmbh, Dresden, DE;
Inventors:
Marko Noack, Dresden, DE;
Georgi Kuzmanov, Dresden, DE;
Assignee:
FERROELECTRIC MEMORY GMBH, Dresden, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01);
Abstract
A ferroelectric memory circuit () includes: a memory cell (), wherein a memory state () of the memory cell () is switchable between a first memory state and a second memory state, the memory cell () further configured to output an electrical current () in response to receiving a readout voltage (); and a sense circuit () configured to output an output voltage () based on the result of integrating the electrical current () output by the memory cell (), wherein the output voltage () represents whether the memory state () is the first memory state or the second memory state.