The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Oct. 13, 2023
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventors:

Stefano Sivero, Comun Nuovo, IT;

Alessandro Palludo, Milan, IT;

Fabio Tassan Caser, Dresden, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G06F 3/0625 (2013.01); G06F 3/0634 (2013.01); G06F 3/0673 (2013.01); G11C 11/221 (2013.01);
Abstract

Disclosed herein are devices, methods, and systems for operating a sense amplifier comprising a plurality of transistors connected in a cascode configuration. The plurality of transistors are configured to sense, in a read operation mode, a switching signal from the state-programmable memory element, and to apply, in a write operation mode, a programming voltage level to the state-programmable memory element. The plurality of transistors are configured to receive a supply voltage at, in the read operation mode, a first supply voltage level that is lower than the programming voltage level and at, in the write operation mode, the programming voltage level, and to operate the sense amplifier in the read operation mode and the write operation mode with no more than a maximum operational voltage level across each of the plurality of transistors that is less than the programming voltage level.


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