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For the Inventor, By the Inventor

Cambourne, United Kingdom

Cambridge Gan Devices Limited


USPTO Granted Patents = 24

Forward Citations = 27

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13 inventors (with patents filed for the assignee):

goldMedal Florin Udrea (22 out of 118 patents)

silverMedal Loizos Efthymiou (19 out of 24 patents)

bronzeMedal Martin Arnold (13 out of 21 patents)

4.  Giorgia Longobardi (12 out of 19 patents)

5.  John William Findlay (7 out of 8 patents)

6.  Sheung Wai Fung (6 out of 6 patents)

7.  Andrea De Luca (2 out of 14 patents)

8.  Tara Vishin (2 out of 2 patents)

9.  Philip Neaves (2 out of 2 patents)

10.  Florin Udrea (2 out of 4 patents)

11.  Zahid Ansari (1 out of 6 patents)

12.  Wai Hon Ng (1 out of 1 patent)

13.  Paul Ryan (1 out of 1 patent)


24 patents:

1. 12745449 - Current sensing in power semiconductor devices (2026-09-22),
2. 12701776 - Power semiconductor device comprising a wide bandgap substrate (2026-08-04),
3. 12696527 - Power semiconductor device comprising a silicon substrate (2026-07-28),
4. 12665589 - Integrated circuit comprising a hotspot detection circuit (2026-06-23),
5. 12640732 - Semiconductor switch (2026-05-26),
6. 12484245 - Power device with current sense (2025-11-25),
7. 12483239 - Semiconductor switch comprising a short-circuit detection circuit (2025-11-25),
8. 12457763 - III-nitride power semiconductor based heterojunction diode (2025-10-28),
9. 12393219 - Stand-by circuit (2025-08-19),
10. 12382651 - Power semiconductor device with an auxiliary gate structure (2025-08-05),
11. 12310088 - Heterojunction based half bridge (2025-05-20),
12. 12294356 - Mixed material power devices and driver circuits (2025-05-06),
13. 12266724 - III-V semiconductor device with integrated power transistor and start-up circuit (2025-04-01),
14. 12046667 - III-V semiconductor device with integrated protection functions (2024-07-23),
15. 11955488 - III-V semiconductor device with integrated power transistor and start-up circuit (2024-04-09),
Company Overview
Cambridge Gan Devices Limited specializes in the development and manufacturing of advanced gallium nitride (GaN) semiconductor technologies. The company focuses on creating high-performance power electronics solutions that enhance efficiency and reduce energy consumption across various applications. With a strong emphasis on innovation, Cambridge Gan Devices is positioned within the semiconductor industry, contributing to advancements in sectors such as renewable energy, electric vehicles, and telecommunications, primarily serving markets in the UK and beyond.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 6 2026

24 Patents

#1 in Cambourne

#737 in United Kingdom

#26,628 in the World

Cambourne, GB
Cambourne, United Kingdom

Cambridge Gan Devices Limited

Forward Citations = 27

13 inventors:

goldMedal Florin Udrea (22 out of 118 patents)

silverMedal Loizos Efthymiou (19 out of 24 patents)

bronzeMedal Martin Arnold (13 out of 21 patents)

4.  Giorgia Longobardi (12 out of 19 patents)

5.  John William Findlay (7 out of 8 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Cambridge Gan Devices Limited. Retrieved from https://idiyas.com/company/cambridge-gan-devices

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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