The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
May. 20, 2024
Applicant:
Cambridge Gan Devices Limited, Cambridge, GB;
Inventors:
Florin Udrea, Cambridge, GB;
John William Findlay, Cambridge, GB;
Assignee:
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/567 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H03K 17/687 (2013.01); H03K 2217/0063 (2013.01);
Abstract
A semiconductor switch comprising a high-electron-mobility transistor (HEMT) (e.g. a III-nitride HEMT). The semiconductor switch may be a combined switch also comprising a high voltage transistor device such as an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), or a superjunction. The high voltage transistor device may be a silicon or silicon carbide device.