The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Nov. 14, 2022
Cambridge Gan Devices Limited, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Loizos Efthymiou, Cambridge, GB;
Martin Arnold, Cambridge, GB;
John Findlay, Cambridge, GB;
Sheung Wai Fung, Cambridge, GB;
Tara Vishin, Cambridge, GB;
Paul Ryan, Cambridge, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
An III-nitride power semiconductor based heterojunction device comprising a first heterojunction and a second heterojunction transistor, wherein the second heterojunction transistor has a substantially identical structure to the first heterojunction transistor, and wherein the second heterojunction transistor is scaled to a smaller area or gate perimeter than the first heterojunction transistor by a scale factor X, where X is larger than 1. The heterojunction device further comprises a resistive operatively connected between the heterojunction transistors a monolithically integrated level shifting stage configured to receive an input signal corresponding to a signal across the resistive load and output a level shifted signal that corresponds to the input signal, and an amplifier stage configured to receive the level shifted signal as an input and provide an output signal to an output node of the heterojunction device, wherein the output signal of the amplifier stage is proportional to the signal across the resistive load.