The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jan. 31, 2022
Cambridge Gan Devices Limited, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Martin Arnold, Cambridge, GB;
Loizos Efthymiou, Cambridge, GB;
Giorgia Longobardi, Cambridge, GB;
Sheung Wai Fung, Cambridge, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
We describe a smart high voltage/power III-nitride semiconductor based diode or rectifier comprising first and second terminals, and further comprising an active device (e.g. a transistor such as a GaN HEMT transistor), a sensing device (e.g. a sensing diode/transistor), a sensing load (e.g. a resistor), wherein the smart high voltage/power III-nitride semiconductor based diode or rectifier is configured to output a sensing signal corresponding a current through the sensing device and/or a voltage drop across the sensing load, wherein the sensing signal is indicative of a current flowing between the first and second terminal when a bias is applied between the first and second terminals.