The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 26, 2023
Cambridge Gan Devices Limited, Cambridge, GB;
Florin Udrea, Cambridgeshire, GB;
Loizos Efthymiou, Cambridgeshire, GB;
Ragini Jain, Cambridgeshire, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
A method of making a power device, the method comprising forming a substrate layer, wherein the substrate layer comprises a doped semiconductor material; forming a drift region of a high voltage diode in the substrate layer; forming a wide-bandgap semiconductor transistor over, and in physical contact with, a first section of a first surface of the substrate layer, wherein the first section includes at least part of the drift region of the high voltage diode; forming a first terminal over a second section of the first surface of the substrate layer; forming a second terminal over either: (i) a second surface of the substrate layer, wherein the second surface is opposite the first surface; or (ii) a third section of the first surface of the substrate layer; wherein the method comprises forming the drift region and the first and the second terminal such that a high voltage diode is formed in the substrate layer, wherein at least part of the diode is located below at least part of the wide-bandgap semiconductor transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile