The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 22, 2023
Cambridge Gan Devices Limited, Cambridge, GB;
Florin Udrea, Cambridge, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
An integrated circuit comprising: a III-nitride high-electron-mobility transistor (HEMT) comprising a source terminal, a gate terminal, and a drain terminal; a hotspot detection circuit comprising a temperature sensor, the temperature sensor being configured to sense a localized temperature of the III-nitride HEMT; and a protection circuit; wherein the hotspot detection circuit is configured, upon sensing by the temperature sensor of an increase in the localized temperature of the III-nitride HEMT, to transmit a hotspot detection signal to the protection circuit; and wherein the protection circuit is configured, upon receipt of the hotspot detection signal, to cause a current between the source terminal and the drain terminal to be reduced.