The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Dec. 28, 2022
Cambridge Gan Devices Limited, Cambridge, GB;
Philip Neaves, Cambridge, GB;
Florin Udrea, Cambridge, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
According to a first aspect of the disclosure, there is provided an electronic device comprising: a power device circuit comprising: (i) a main power transistor, comprising a main drain terminal, a main source terminal and a main gate terminal, (ii) a resistive sensing load, and (iii) a sensing transistor comprising a source connected to the main source terminal, a gate connected to the main gate terminal and a drain connected to a first terminal of the resistive sensing load. The electronic device further comprises: a feedback circuit comprising at least one operational amplifier and at least one transconductor, and a switching circuit comprising at least one switch for connecting and disconnecting the power device circuit to the feedback circuit. A first input of the at least one operational amplifier and a second terminal of the resistive sensing load are selectively connected to the main drain terminal through the switching circuit. A second input of the at least one operational amplifier and at least one output of the at least one transconductor are selectively connected to the drain of the sensing transistor through the switching circuit. The main power transistor has a first area or gate perimeter and the sensing transistor has a second area or gate perimeter smaller than the first area or gate perimeter. During an ON state of the main power transistor, the output current of the transconductor of the feedback circuit is proportional to the potential difference between the main drain terminal and the drain of the sensing transistor, resulting in a voltage across the resistive sensing load of substantially zero.