The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 26, 2023
Cambridge Gan Devices Limited, Cambridge, GB;
Florin Udrea, Cambridgeshire, GB;
Loizos Efthymiou, Cambridgeshire, GB;
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Abstract
A power device comprising a substrate, a first wide bandgap semiconductor material positioned over the substrate, wherein the substrate comprises a second wide bandgap semiconductor material different from the first bandgap semiconductor material, a high voltage transistor formed in the first wide bandgap semiconductor material, and a high voltage diode associated with the substrate, wherein at least part of the high voltage diode is positioned below at least part of the high voltage transistor. The high voltage diode comprises a drift region, the drift region formed in the second-wide bandgap material.