Power semiconductor device comprising a silicon substrate

Abstract

A III-nitride power semiconductor device comprising a heterojunction transistor, the heterojunction transistor comprising: an active III-nitride semiconductor region comprising at least one heterojunction formed between a GaN layer and a AlGaN layer; a drain terminal operatively connected to the active III-nitride semiconductor region; a source terminal laterally spaced from the drain terminal and operatively connected to the active III-nitride semiconductor region; and a gate terminal positioned over the active III-nitride semiconductor region, the gate terminal being formed between the drain terminal and the source terminal. The power device further comprises a substrate, wherein the substrate comprises a monocrystalline silicon material; a high voltage diode associated with the substrate, the high voltage diode comprising a cathode terminal, an anode terminal and a drift region, wherein at least a part of the drift region is formed within substrate; wherein the heterojunction transistor is positioned over the substrate such that the high voltage diode is located below at least part of the heterojunction transistor, wherein the drift region and is adjacent to and in physical contact with the active III-nitride semiconductor region.