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Anelva Corporation

USPTO Granted Patents = 256

% Expired Patents = 9.8

EPO Patents = 1

Forward Citations = 6,973

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255 inventors (with patents filed for the assignee):

Nobuyuki Takahashi (36 out of 108 patents)

Yoshiro Shiokawa (21 out of 29 patents)

Shigeru Mizuno (20 out of 25 patents)

4. Masahiko Kobayashi (19 out of 29 patents)

5. Atsushi Sekiguchi (19 out of 34 patents)

6. Tsutomu Tsukada (18 out of 18 patents)

7. Junro Sakai (10 out of 10 patents)

8. Naoki Watanabe (9 out of 142 patents)

9. Megumi Nakamura (9 out of 18 patents)

10. Toshihiro Fujii (9 out of 9 patents)

11. Yukito Nakagawa (9 out of 10 patents)

12. Masahito Ishihara (8 out of 13 patents)

13. Yoichiro Numasawa (8 out of 12 patents)

14. Nobuyuki Takahashi (8 out of 32 patents)

15. Kazuhito Watanabe (6 out of 11 patents)

Core Competencies:

Thin Film Deposition

CVD Apparatus

Mass Spectrometry

Plasma Processing

Sputtering Device

Magnetoresistive Films

Semiconductor Processing

Substrate Heating

Ionization Method

Magnetic Recording Media

Etching Techniques

Nanocrystalline Structures

256 patents: Sort by Forward Citations

1. 8524094 - Masking material for dry etching (2013-09-03),

2. 8377210 - Film forming apparatus (2013-02-19),

3. 7935187 - Film forming apparatus (2011-05-03),

4. 7914654 - Method and apparatus for depositing a magnetoresistive multilayer film (2011-03-29),

5. 7589002 - Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method (2009-09-15),

6. 7312418 - Semiconductor thin film forming system (2007-12-25),

7. 7267724 - Thin-film disposition apparatus (2007-09-11),

8. 7211152 - Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system (2007-05-01),

9. 7202474 - Ion attachment mass spectrometry apparatus (2007-04-10),

10. 7182122 - Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus (2007-02-27),

11. 7164571 - Wafer stage with a magnet (2007-01-16),

12. 7164121 - Ion attachment mass spectrometry method (2007-01-16),

13. 7159537 - Device for fixing a gas showerhead or target plate to an electrode in plasma processing systems (2007-01-09),

14. 7156961 - Sputtering apparatus and film forming method (2007-01-02),

15. 7138364 - Cleaning gas and etching gas (2006-11-21),

Anelva Corporation, headquartered in Fuchu, Japan, specializes in advanced thin film technology, focusing on the development and manufacturing of equipment for thin film deposition. The company is recognized for its expertise in various core technologies, including chemical vapor deposition (CVD) apparatus, mass spectrometry, and plasma processing. Anelva's innovations cater to the semiconductor industry, particularly in the production of magnetoresistive films and substrate heating solutions, enhancing the efficiency and performance of electronic devices.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

256 Patents

#2 in Fuchu

#596 in Japan

#3,406 in the World

Anelva Corporation

Forward Citations = 6,973

255 inventors:

Nobuyuki Takahashi (36 out of 108 patents)

Yoshiro Shiokawa (21 out of 29 patents)

Shigeru Mizuno (20 out of 25 patents)

4. Masahiko Kobayashi (19 out of 29 patents)

5. Atsushi Sekiguchi (19 out of 34 patents)

Please report any incorrect information to [email protected]

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