For the Inventor, By the Inventor

Enter assignee name

Anelva Corporation

USPTO Granted Patents = 256

EPO Patents = 1

Forward Citations = 6,890

Loading Chart...

Loading Chart...

255 inventors (with patents filed for the assignee):

Nobuyuki Takahashi (36 out of 107 patents)

Yoshiro Shiokawa (21 out of 29 patents)

Shigeru Mizuno (20 out of 25 patents)

4. Masahiko Kobayashi (19 out of 28 patents)

5. Atsushi Sekiguchi (19 out of 34 patents)

6. Tsutomu Tsukada (18 out of 18 patents)

7. Junro Sakai (10 out of 10 patents)

8. Naoki Watanabe (9 out of 140 patents)

9. Megumi Nakamura (9 out of 18 patents)

10. Toshihiro Fujii (9 out of 9 patents)

11. Yukito Nakagawa (9 out of 10 patents)

12. Masahito Ishihara (8 out of 13 patents)

13. Yoichiro Numasawa (8 out of 12 patents)

14. Nobuyuki Takahashi (8 out of 32 patents)

15. Kazuhito Watanabe (6 out of 11 patents)

Core Competencies:

Dry Etching

Film Forming Apparatus

Magnetoresistive Multilayer Film

Silicon Nanocrystalline Structure

Thin Film Fabrication

Ion Attachment Mass Spectrometry

Sputtering Apparatus

CVD System

Capacitive Pressure Sensor

Plasma Processing

Magnetic Recording Medium

Substrate Processing

256 patents: Sort by Forward Citations

1. 8524094 - Masking material for dry etching (2013-09-03),

2. 8377210 - Film forming apparatus (2013-02-19),

3. 7935187 - Film forming apparatus (2011-05-03),

4. 7914654 - Method and apparatus for depositing a magnetoresistive multilayer film (2011-03-29),

5. 7589002 - Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method (2009-09-15),

6. 7312418 - Semiconductor thin film forming system (2007-12-25),

7. 7267724 - Thin-film disposition apparatus (2007-09-11),

8. 7211152 - Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system (2007-05-01),

9. 7202474 - Ion attachment mass spectrometry apparatus (2007-04-10),

10. 7182122 - Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus (2007-02-27),

11. 7164571 - Wafer stage with a magnet (2007-01-16),

12. 7164121 - Ion attachment mass spectrometry method (2007-01-16),

13. 7159537 - Device for fixing a gas showerhead or target plate to an electrode in plasma processing systems (2007-01-09),

14. 7156961 - Sputtering apparatus and film forming method (2007-01-02),

15. 7138364 - Cleaning gas and etching gas (2006-11-21),

Anelva Corporation is a leading global provider of advanced vacuum technology solutions. With over 50 years of experience, we specialize in manufacturing and supplying cutting-edge vacuum deposition systems for various industries including semiconductor, solar, and electronics. Our state-of-the-art equipment ensures precise, reliable, and high-quality thin film deposition, helping our customers achieve their manufacturing goals and stay at the forefront of technological advancements. Visit our website to learn more about our innovative vacuum solutions and how we can help optimize your manufacturing processes.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

256 Patents

#261 in Tokyo

#574 in Japan

#3,299 in the World

Anelva Corporation

Forward Citations = 6,890

255 inventors:

Nobuyuki Takahashi (36 out of 107 patents)

Yoshiro Shiokawa (21 out of 29 patents)

Shigeru Mizuno (20 out of 25 patents)

4. Masahiko Kobayashi (19 out of 28 patents)

5. Atsushi Sekiguchi (19 out of 34 patents)

Please report any incorrect information to support@idiyas.com

Loading…