The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Jan. 28, 2003
Yutaka Ohira, Tokyo, JP;
Yuki Mitsui, Tokyo, JP;
Taisuke Yonemura, Tokyo, JP;
Akira Sekiya, Ibaraki, JP;
Yutaka Ohira, Tokyo, JP;
Yuki Mitsui, Tokyo, JP;
Taisuke Yonemura, Tokyo, JP;
Akira Sekiya, Ibaraki, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Anelva Corporation, Tokyo, JP;
Ulvac, Inc., Chigasaki, JP;
Kanto Denka Kogyo Co., Ltd., Tokyo, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Sony Corporation, Tokyo, JP;
Daikin Industries, Ltd., Osaka, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Renesas Technology Corp., Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.