The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2007

Filed:

Oct. 24, 2002
Applicants:

Kenji Okatani, Fuchu, JP;

Satoshi Yamada, Fuchu, JP;

Yoshiro Hasegawa, Tama, JP;

Inventors:

Kenji Okatani, Fuchu, JP;

Satoshi Yamada, Fuchu, JP;

Yoshiro Hasegawa, Tama, JP;

Assignee:

Anelva Corporation, Fuchu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.


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