The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 30, 2016
Kla Corporation, Milpitas, CA (US);
Tal Marciano, Zychron Yaacov, IL;
Barak Bringoltz, Rishon LeTzion, IL;
Evgeni Gurevich, Yokneam Illit, IL;
Ido Adam, Qiriat Ono, IL;
Ze'ev Lindenfeld, Modi'n-Macabim-Reut, IL;
Zeng Zhao, Shanghai, CN;
Yoel Feler, Haifa, IL;
Daniel Kandel, Aseret, IL;
Nadav Carmel, Mevasseret-Zion, IL;
Amnon Manassen, Haifa, IL;
Nuriel Amir, St. Yokne'am, IL;
Oded Kaminsky, Givat Shemuel, IL;
Tal Yaziv, Kiryat Haim, IL;
Ofer Zaharan, Jerusalem, IL;
Moshe Cooper, Timrat, IL;
Roee Sulimarski, Haifa, IL;
Tom Leviant, Yoqneam Illit, IL;
Noga Sella, Migdal Haemek, IL;
Boris Efraty, Carmiel, IL;
Lilach Saltoun, Qiriat Ono, IL;
Amir Handelman, Hod-Hasharon, IL;
Eltsafon Ashwal, Migdal Ha' emek, IL;
Ohad Bachar, Timrat, IL;
KLA Corporation, Milpitas, CA (US);
Abstract
Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.