Seoul, South Korea

Yun Heub Song

This inventor holds 39 USPTO granted patents and 24 published patent applications, primarily in Three-Dimensional Flash Memory. Top assignees: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hanyang University, Hynix Semiconductor Inc.. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yun Heub Song. Retrieved from https://idiyas.com/inventor/yun-heub-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 74.4

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Kyunggi, KR (2004)
  • Gyeonggi-do, KR (2011 - 2023)
  • Seoul, KR (2015 - 2024)
  • Seongnam-si, KR (2015 - 2024)
  • Seongnam, KR (2024)

Company Filing History:


Years Active: 2004-2026

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Areas of Expertise:
Three-Dimensional Flash Memory
Ferroelectric Layer
Semiconductor Device
Integration Density
Manufacturing Method
Memory Architecture
Thin Film Transistor
Phase-Change Memory
Non-Volatile Memory
Back Gate Structure
Defective MTJ Cell
Pulse Driving Apparatus
39 patents (USPTO):Explore Patents

Title: **Yun Heub Song: A Pioneer in Three-Dimensional Flash Memory Technologies**

Introduction

Yun Heub Song is a noteworthy inventor based in Seoul, South Korea, celebrated for his contributions to the field of memory technologies. With an impressive portfolio of 28 patents, Song has established himself as a leader in developing innovative solutions that address common challenges in the semiconductor industry.

Latest Patents

Among his latest patents, Song has introduced a groundbreaking three-dimensional flash memory with reduced wire length. This invention focuses on techniques to suppress interference caused by inter-cell insulation layers in vertical cells. Moreover, it incorporates methods to form stable vertical channel layers while minimizing wire length compared to conventional designs. This advancement aims to enhance chip characteristics, improving operational speed, reducing power consumption, and easing manufacturing complexities.

Another significant patent involves a bi-directional two-terminal phase-change memory device. This inventive solution employs a tunneling thin film to create a more efficient operational method. In this phase-change memory device, a P-type intermediate layer serves as a data storage component. The invention includes N-type semiconductor layers flanking the intermediate layer and strategically implements tunneling films to mitigate leakage currents and prevent intermixing between dopants.

Career Highlights

Yun Heub Song has held key positions at prominent organizations, including Samsung Electronics Co., Ltd., where he contributed to advancing memory technologies. Additionally, his work with the Industry-University Cooperation Foundation at Hanyang University has allowed him to collaborate with academia, further enhancing his innovative pursuits.

Collaborations

Throughout his career, Song has worked alongside esteemed colleagues, including Jae Kyeong Jeong and Chang Hwan Choi. Their collaborative efforts have led to significant advancements in memory technologies, showcasing the power of teamwork in the pursuit of innovation.

Conclusion

As an inventor, Yun Heub Song continues to make remarkable strides in the field of memory technologies. His expertise and innovative mindset not only contribute to Samsung Electronics and academic research but also shape the future of semiconductor technology. With his continued focus on reducing complexities and enhancing memory performance, Yun Heub Song is poised to be a pivotal figure in the evolution of three-dimensional flash memory and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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