The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 28, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yun Heub Song, Seoul, KR;
Samsung Electronics Co., LTD., Suwon-si, KR;
Abstract
Disclosed are a three-dimensional flash memory, to which a GSL-removed structure is applied, and an operating method thereof. According to an embodiment, the three-dimensional flash memory comprises: a plurality of word lines which are formed extending in a horizontal direction on a substrate and are sequentially stacked; and a plurality of strings passing through the plurality of word lines and formed extending in one direction on the substrate, wherein each of the plurality of strings comprises a channel layer formed extending in the one direction and a charge storage layer formed extending in the one direction to surround the channel layer, and the channel layer and the charge storage layer constitute a plurality of memory cells corresponding to the plurality of word lines, and the channel layer comprises a back gate formed extending in the one direction while at least a part thereof is surrounded by the channel layer and an insulation film formed extending in the one direction between the back gate and the channel layer, and each of the plurality of strings includes the back gate. Accordingly, the three-dimensional flash memory has a GSL-removed structure.