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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12720752 B1

PDFFull Text
Date of Patent:
Aug. 25, 2026

Filed:

May. 04, 2021

Three dimensional flash memory with bulk erasing

Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Yun Heub Song, Seoul, KR;

Bongseok Kim, Seoul, KR;

Inho Nam, Seoul, KR;

Assignee:

IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

William B Partridge

Assistant Examiner:

Gustavo G Ramallo

Int. Cl.
CPC ...
H10B 43/40 (2023.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A three-dimensional flash memory for promoting integration, and a manufacturing method therefor are disclosed. The three-dimensional flash memory to which a cell on peripheral circuit (COP) structure is applied comprises: a substrate having at least one transistor of a peripheral circuit, formed according to the COP structure; at least one memory cell string formed to extend in one direction above the at least one transistor; and a common source line commonly used by means of the at least one transistor and the at least one memory cell string.

Find Patent Forward Citations

Song, Yun. (2026). Three dimensional flash memory with bulk erasing (U.S. Patent No. 12720752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12720752

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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