The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Mar. 25, 2022
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Yun Heub Song, Seoul, KR;
Jaemin Sim, Seoul, KR;
Abstract
Provided is a method for operating a program of a three-dimensional flash memory. A program voltage has a value obtained by adding a step voltage to a previous program voltage applied in a previous program operation, and the step voltage is increased as a program operation is repeated. Also, the program operation is performed on a target memory cell by applying a negative voltage to a bit line of a selected cell string and applying the program voltage to a selected word line. In addition, tunneling oxide-charge trap nitride-blocking oxide (ONO) formed surrounding a vertical channel pattern is included, and at least one of a tunneling oxide layer or a blocking oxide layer of the ONO is formed of a ferroelectric material.