The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 25, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yun Heub Song, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Disclosed is a three-dimensional flash memory using a ferroelectric layer on the basis of a back gate structure. According to an embodiment, a three-dimensional flash memory comprises: a plurality of word liens extending on a substrate in a horizontal direction and sequentially stacked; and a plurality of strings extending through the plurality of word lines on the substrate in one direction, each of the plurality of strings including a channel layer extending in the one direction and a ferroelectric layer extending in the one direction to surround the channel layer, wherein a back gate extending in the one direction and an insulating layer extending in the one direction to surround the back gate are disposed inside the channel layer, and the channel layer and the ferroelectric layer constitute a plurality of memory cells corresponding to the plurality of word lines, wherein the ferroelectric layer is formed of a ferroelectric material and used as data storage by changing and maintaining the states of electric charges.