Switching device having bi-directional drive characteristics and method of operating same

Abstract

Disclosed is a bi-directional two-terminal phase-change memory device using a tunneling thin film and a method of operating the same. According to an one embodiment, a phase-change memory device comprises: a first electrode; a second electrode; and a phase-change memory cell interposed between the first electrode and the second electrode, wherein the phase-change memory cell comprises: a P-type intermediate layer used as a data storage as a crystal state changes due to a voltage applied through the first electrode and the second electrode; an upper layer and a lower layer formed using an N-type semiconductor material at both ends of the intermediate layer; and at least one tunneling thin film disposed on at least one area from among an area between the upper layer and the intermediate layer or an area between the lower layer and the intermediate layer, so as to reduce a leakage current in the intermediate layer or prevent intermixing between a P-type dopant and an N-type dopant.