Method of operating a three-dimensional semiconductor memory device

Abstract

A method of programming a three-dimensional semiconductor memory device includes applying a first word line programming voltage to a selected word line among the word lines, floating unselected word lines among the word lines, and applying a back-gate pass voltage to the back-gate electrode; applying a first word line verification voltage to the selected word line, applying a word line pass voltage to the unselected word lines, and applying a first back-gate verification voltage to the back-gate electrode; applying a second word line programming voltage to the selected word line, floating the unselected word lines, and applying the back-gate pass voltage to the back-gate electrode; and applying a second word line verification voltage to the selected word line, applying the word line pass voltage to the unselected word lines, and applying a second back-gate verification voltage to the back-gate electrode.