The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Aug. 08, 2024
Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Yun Heub Song, Seoul, KR;

Jea Min Shim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/22 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 11/22 (2013.01); G11C 11/223 (2013.01); G11C 11/2275 (2013.01); G11C 11/5657 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01);
Abstract

Disclosed is an operation method for a three-dimensional flash memory including a ferroelectric-based data storage pattern and a back gate. According to an embodiment, the operation method for a program of a three-dimensional flash memory may comprise the steps of: applying a program voltage to a selected word line corresponding to a target memory cell for program operation from among word lines; floating each of unselected word lines other than the selected word line from among the word lines; applying a pass voltage to a back gate of a selected vertical channel structure including the target memory cell from among vertical channel structures; and performing program operation on the target memory cell, in response to the application of the program voltage to the selected word line, the floating of each of the unselected word lines, and the application of the pass voltage to the back gate.


Find Patent Forward Citations

Song, Yun. (2026). Operation method for three-dimensional flash memory including ferroelectric-based data storage pattern and back gate (U.S. Patent No. 12620444). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12620444

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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