The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jan. 25, 2023
Applicants:

SK Hynix Inc., Icheon, KR;

Industry-university Cooperation Foundation Hanyang University, Seoul, KR;

Inventors:

In Ku Kang, Icheon, KR;

Chang Han Kim, Icheon, KR;

Yun Heub Song, Seoul, KR;

Jae Min Sim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10W 20/435 (2026.01);
Abstract

A three dimensional semiconductor device is disclosed. The tree dimensional semiconductor device includes a word line stack over a substrate and a channel pillar structure passing through the word line stack in a vertical direction perpendicular to a top surface of the substrate. The channel pillar structure includes a channel structure. The channel structure includes a blocking layer, a trap layer, a tunneling layer, a channel layer, a filling layer, and a back gate electrode. The channel structure has a pillar shape.


Find Patent Forward Citations

Kang, In. (2026). Three dimensional semiconductor device having a back-gate electrode (U.S. Patent No. 12615776). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615776

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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