Yong-Tian Hou

This inventor holds 15 USPTO granted patents and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong-Tian Hou. Retrieved from https://idiyas.com/inventor/yong-tian-hou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 (Patent Applications = 2)

% Patents Active = 66.7

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 95(Granted Patents)

Location History:

Hsin-Chu, TW (2010)
Singapore, TW (2011)
Singapore, SG (2008 - 2018)
Chuangwei Township, TW (2021)

Company Filing History:

15 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2008-2026

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12532531 - Integrated circuit metal gate structure and method of fabricating thereof (2026-01-20),

2. 11004950 - Integrated circuit metal gate structure (2021-05-11),

3. 10164045 - Integrated circuit metal gate structure (2018-12-25),

4. 8836038 - CMOS dual metal gate semiconductor device (2014-09-16),

5. 8679962 - Integrated circuit metal gate structure and method of fabrication (2014-03-25),

6. 8536660 - Hybrid process for forming metal gates of MOS devices (2013-09-17),

7. 8384159 - Semiconductor devices and methods with bilayer dielectrics (2013-02-26),

8. 8324090 - Method to improve dielectric quality in high-k metal gate technology (2012-12-04),

9. 8258546 - High-k metal gate device (2012-09-04),

10. 7994051 - Implantation method for reducing threshold voltage for high-K metal gate device (2011-08-09),

11. 7989321 - Semiconductor device gate structure including a gettering layer (2011-08-02),

12. 7871915 - Method for forming metal gates in a gate last process (2011-01-18),

13. 7812414 - Hybrid process for forming metal gates (2010-10-12),

14. 7531399 - Semiconductor devices and methods with bilayer dielectrics (2009-05-12),

15. 7465634 - Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structures (2008-12-16),

Title: The Innovative Journey of Yong-Tian Hou

Introduction: Yong-Tian Hou, a visionary inventor hailing from Singapore, SG, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Yong-Tian Hou's latest patents showcase his commitment to innovation, with a focus on cutting-edge technologies in the areas of artificial intelligence, renewable energy, and biotechnology.

Career Highlights: Throughout his illustrious career, Yong-Tian Hou has been recognized for his pioneering work in developing sustainable solutions for global challenges. His inventions have revolutionized industries and improved the quality of life for many.

Collaborations: Yong-Tian Hou has collaborated with leading research institutions, universities, and multinational companies to bring his inventions to life. His partnerships have been instrumental in advancing technology and driving positive change in society.

Conclusion: Yong-Tian Hou's passion for innovation and dedication to creating a better world through his inventions have solidified his reputation as a trailblazing inventor in Singapore and beyond. His work continues to inspire future generations to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: