The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 20, 2009
Fong-yu Yen, Taoyuan County, TW;
Cheng-lung Hung, Hsinchu, TW;
Peng-fu Hsu, Hsinchu, TW;
Vencent S. Chang, Hsin-Chu, TW;
Yong-tian Hou, Singapore, SG;
Jin Ying, Singapore, SG;
Hun-jan Tao, Hsin-Chu, TW;
Fong-Yu Yen, Taoyuan County, TW;
Cheng-Lung Hung, Hsinchu, TW;
Peng-Fu Hsu, Hsinchu, TW;
Vencent S. Chang, Hsin-Chu, TW;
Yong-Tian Hou, Singapore, SG;
Jin Ying, Singapore, SG;
Hun-Jan Tao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device is disclosed that includes: a substrate; a first dielectric layer formed over the substrate and formed of a first high-k material, the first high-k material selected from the group consisting of HfO, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; a second dielectric layer formed over the first dielectric layer and formed of a second high-k material, the second high-k material being different than the first high-k material and selected from the group consisting of HfO, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and a metal gate formed over the second dielectric layer. The first dielectric layer includes ions selected from the group consisting of N, O, and Si.