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For the Inventor, By the Inventor

Hsinchu, Taiwan

Peng-Fu Hsu

This inventor holds 30 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peng-Fu Hsu. Retrieved from https://idiyas.com/inventor/peng-fu-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30 

% Patents Active = 36.7

Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 161(Granted Patents)


Company Filing History:

goldMedal29 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 834,601 
Other
 patents

Years Active: 2002-2026

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Areas of Expertise:
Interconnect Structures
High-K Metal Gates
MOS Devices
Semiconductor Devices
Dielectric Quality
Dual-Metal Gate
FIN-FET Structures
Photoresist Stripping
Cavitation Cleaning
Critical Dimension Measurement
Organic Material Removal
Chemical Vapor Deposition
30 patents (USPTO):Explore Patents
1. 12765408 - Method of manufacturing an interconnect structure with a metal cap (2026-10-13),
2. 11929314 - Interconnect structures including a fin structure and a metal cap (2024-03-12),
3. 9263445 - Method of fabricating dual high-k metal gates for MOS devices (2016-02-16),
4. 8853068 - Method of fabricating dual high-k metal gate for MOS devices (2014-10-07),
5. 8836038 - CMOS dual metal gate semiconductor device (2014-09-16),
6. 8536660 - Hybrid process for forming metal gates of MOS devices (2013-09-17),
7. 8384159 - Semiconductor devices and methods with bilayer dielectrics (2013-02-26),
8. 8324090 - Method to improve dielectric quality in high-k metal gate technology (2012-12-04),
9. 8105931 - Method of fabricating dual high-k metal gates for MOS devices (2012-01-31),
10. 7989321 - Semiconductor device gate structure including a gettering layer (2011-08-02),
11. 7947591 - Semiconductor devices with dual-metal gate structures and fabrication methods thereof (2011-05-24),
12. 7939396 - Base oxide engineering for high-K gate stacks (2011-05-10),
13. 7875547 - Contact hole structures and contact structures and fabrication methods thereof (2011-01-25),
14. 7812414 - Hybrid process for forming metal gates (2010-10-12),
15. 7732878 - MOS devices with continuous contact etch stop layer (2010-06-08),

Title: The Innovative Journey of Inventor Peng-Fu Hsu

Introduction: Peng-Fu Hsu, a talented male inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Peng-Fu Hsu holds several recent patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Peng-Fu Hsu has worked for leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry. His expertise in developing cutting-edge solutions has earned him recognition as a pioneer in his field.

Collaborations: Throughout his career, Peng-Fu Hsu has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the successful development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: In conclusion, Peng-Fu Hsu's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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