Enter inventor name

Peng-Fu Hsu

This inventor holds 29 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 2002-2024.

USPTO Granted Patents = 29 (Patent Applications = 3)

% Patents Active = 37.9

Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 160(Granted Patents)

Company Filing History:

28 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 834,411

Other

patents

Years Active: 2002-2024

Loading Chart...

Areas of Expertise:

Interconnect Structures

High-K Metal Gates

MOS Devices

Semiconductor Devices

Dielectric Quality

Dual-Metal Gate

FIN-FET Structures

Photoresist Stripping

Cavitation Cleaning

Critical Dimension Measurement

Organic Material Removal

Chemical Vapor Deposition

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11929314 - Interconnect structures including a fin structure and a metal cap (2024-03-12),

2. 9263445 - Method of fabricating dual high-k metal gates for MOS devices (2016-02-16),

3. 8853068 - Method of fabricating dual high-k metal gate for MOS devices (2014-10-07),

4. 8836038 - CMOS dual metal gate semiconductor device (2014-09-16),

5. 8536660 - Hybrid process for forming metal gates of MOS devices (2013-09-17),

6. 8384159 - Semiconductor devices and methods with bilayer dielectrics (2013-02-26),

7. 8324090 - Method to improve dielectric quality in high-k metal gate technology (2012-12-04),

8. 8105931 - Method of fabricating dual high-k metal gates for MOS devices (2012-01-31),

9. 7989321 - Semiconductor device gate structure including a gettering layer (2011-08-02),

10. 7947591 - Semiconductor devices with dual-metal gate structures and fabrication methods thereof (2011-05-24),

11. 7939396 - Base oxide engineering for high-K gate stacks (2011-05-10),

12. 7875547 - Contact hole structures and contact structures and fabrication methods thereof (2011-01-25),

13. 7812414 - Hybrid process for forming metal gates (2010-10-12),

14. 7732878 - MOS devices with continuous contact etch stop layer (2010-06-08),

15. 7663185 - FIN-FET device structure formed employing bulk semiconductor substrate (2010-02-16),

Title: The Innovative Journey of Inventor Peng-Fu Hsu

Introduction: Peng-Fu Hsu, a talented male inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Peng-Fu Hsu holds several recent patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Peng-Fu Hsu has worked for leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry. His expertise in developing cutting-edge solutions has earned him recognition as a pioneer in his field.

Collaborations: Throughout his career, Peng-Fu Hsu has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the successful development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: In conclusion, Peng-Fu Hsu's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]