The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 12, 2008
Peng-fu Hsu, Hsin-Chu, TW;
Yong-tian Hou, Singapore, SG;
Ssu-yi LI, Jhubei, TW;
Kuo-tai Huang, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Peng-Fu Hsu, Hsin-Chu, TW;
Yong-Tian Hou, Singapore, SG;
Ssu-Yi Li, Jhubei, TW;
Kuo-Tai Huang, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a first MOS device including a first gate, and a second MOS device including a second gate. The first gate includes a first high-k dielectric over a semiconductor substrate; a second high-k dielectric over the first high-k dielectric; a first metal layer over the second high-k dielectric, wherein the first metal layer dominates a work-function of the first MOS device; and a second metal layer over the first metal layer. The second gate includes a third high-k dielectric over the semiconductor substrate, wherein the first and the third high-k dielectrics are formed of same materials, and have substantially a same thickness; a third metal layer over the third high-k dielectric, wherein the third metal layer and the second metal layer are formed of same materials, and have substantially a same thickness; and a fourth metal layer over the third metal layer.