The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Oct. 18, 2006
Liang-gi Yao, Hsinchu, TW;
Shiang-bau Wang, Taoyuan, TW;
Huan-just Lin, Hsinchu, TW;
Peng-fu Hsu, Hsinchu, TW;
Jin Ying, Singapore, SG;
Hun-jan Tao, Hsin-Chu, TW;
Liang-Gi Yao, Hsinchu, TW;
Shiang-Bau Wang, Taoyuan, TW;
Huan-Just Lin, Hsinchu, TW;
Peng-Fu Hsu, Hsinchu, TW;
Jin Ying, Singapore, SG;
Hun-Jan Tao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a substrate, a gate stack on the substrate, a source/drain region adjacent the gate stack, a source/drain silicide region on the source/drain region, a protection layer on the source/drain silicide region, wherein a region over the gate stack is substantially free from the protection layer, and a contact etch stop layer (CESL) having a stress over the protection layer and extending over the gate stack.