The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Jan. 12, 2005
Ju-wang Hsu, Taipei, TW;
Jyu-horng Shieh, Hsin-Chu, TW;
Yi-nien Su, Kaohsiung, TW;
Peng-fu Hsu, Hsinchu, TW;
Hun-jan Tao, Hsinchu, TW;
Ju-Wang Hsu, Taipei, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Yi-Nien Su, Kaohsiung, TW;
Peng-Fu Hsu, Hsinchu, TW;
Hun-Jan Tao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.