The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Mar. 12, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Hsien Huang, Hsinchu, TW;

Peng-Fu Hsu, Hsinchu, TW;

Yu-Syuan Cai, Hsinchu, TW;

Min-Hsiu Hung, Tainan, TW;

Chen-Yuan Kao, Hsinchu County, TW;

Ken-Yu Chang, Hsinchu, TW;

Chun-I Tsai, Hsinchu, TW;

Chia-Han Lai, Hsinchu County, TW;

Chih-Wei Chang, Hsinchu, TW;

Ming-Hsing Tsai, Chu-Pei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/4828 (2013.01); H01L 23/49838 (2013.01); H01L 24/29 (2013.01); H01L 2224/29184 (2013.01);
Abstract

In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.


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