The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Jul. 20, 2011
Cheng-lung Hung, Hsinchu County, TW;
Yong-tian Hou, Singapore, SG;
Keh-chiang Ku, Sindan, TW;
Chien-hao Huang, Banciao, TW;
Cheng-Lung Hung, Hsinchu County, TW;
Yong-Tian Hou, Singapore, SG;
Keh-Chiang Ku, Sindan, TW;
Chien-Hao Huang, Banciao, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.