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For the Inventor, By the Inventor

Sindan, Taiwan

Keh-Chiang Ku

USPTO Granted Patents = 11

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:

goldMedal11 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2009-2013

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11 patents (USPTO):Explore Patents
1. 8349732 - Implanted metal silicide for semiconductor device (2013-01-08),
2. 8258546 - High-k metal gate device (2012-09-04),
3. 8212253 - Shallow junction formation and high dopant activation rate of MOS devices (2012-07-03),
4. 8058134 - Junction profile engineering using staged thermal annealing (2011-11-15),
5. 8039375 - Shallow junction formation and high dopant activation rate of MOS devices (2011-10-18),
6. 7994051 - Implantation method for reducing threshold voltage for high-K metal gate device (2011-08-09),
7. 7741699 - Semiconductor device having ultra-shallow and highly activated source/drain extensions (2010-06-22),
8. 7736968 - Reducing poly-depletion through co-implanting carbon and nitrogen (2010-06-15),
9. 7504292 - Short channel effect engineering in MOS device using epitaxially carbon-doped silicon (2009-03-17),
10. 7494857 - Advanced activation approach for MOS devices (2009-02-24),
11. 7482211 - Junction leakage reduction in SiGe process by implantation (2009-01-27),

Title: Innovator Keh-Chiang Ku: Pioneering Advances in Semiconductor Technology

Introduction

Keh-Chiang Ku, an accomplished inventor based in Sindan, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, he has played a vital role in advancing the efficiency and capabilities of semiconductor devices.

Latest Patents

Among Keh-Chiang Ku's latest innovations are two noteworthy patents. The first is for an "Implanted Metal Silicide for Semiconductor Device," which details a device and method for forming metal silicide on substrates that enhances semiconductor performance. This invention involves the careful placement of metal on the substrate, followed by a series of annealing processes that improve the characteristics of the semiconductor device.

The second patent is for a "High-k Metal Gate Device," a semiconductor design that optimizes the transistor's gate stack. This structure employs a high-k dielectric layer, enhancing performance and efficiency in device operations. These patents reflect Ku's commitment to improving semiconductor technologies and highlight his innovative approach to solving complex challenges in the industry.

Career Highlights

Keh-Chiang Ku has had a distinguished career at Taiwan Semiconductor Manufacturing Company Ltd., where he has been instrumental in driving research and development initiatives. His expertise in semiconductor technology and inventions has earned him recognition among colleagues and industry peers.

Collaborations

Throughout his career, Ku has collaborated with notable colleagues such as Chun-Feng Nieh and Li-Ting Wang. Together, they have worked on various projects that push the boundaries of semiconductor technology, enhancing the efficacy and performance of electronic devices.

Conclusion

In conclusion, Keh-Chiang Ku stands out as a leading figure in the field of semiconductor innovation. His groundbreaking patents and contributions to Taiwan Semiconductor Manufacturing Company Ltd. showcase his dedication to advancing technology. As the field continues to evolve, his work will undoubtedly play a key role in shaping the future of semiconductor devices.

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